summary n channel mosfet--- v (br)dss =30v; r sat(on) =0.18 ; d = 2.7a schottky diode --- v r = 40v; v f = 500mv (@1a); i c =1a description packaged in the new innovation 3mm x 2mm mlp this combination dual product comprises a low gate drive, low on-resistance n-channel mosfet plus a fast-switching 1a schottky barrier diode. this combination provides for highly efficient performance in a range of applications, including dc-dc conversion and low voltage power-management circuits. users will also gain several other key benefits : performance capability equivalent to much larger packages improved circuit efficiency & power levels pcb area and device placement savings lower package height (0.9mm nom) reduced component count features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? extremely low v f , fast switching schottky ? 3mm x 2mm mlp applications ? dc - dc converters ? low voltage power-management device marking msa ZXMNS3BM832 draft issue b - june 2002 mpps? miniature package power solutions 30v n channel mosfet & 40v, 1a schottky diode combination dual 1 cathode anode device reel tape width quantity per reel ZXMNS3BM832ta 7 8mm 3000 ZXMNS3BM832tc 13 8mm 10000 ordering information 3mm x 2mm dual die mlp 3mm x 2mm dual mlp underside view pinout
ZXMNS3BM832 draft issue b - june 2002 2 parameter symbol value unit mosfet drain-source voltage v dss 30 v gate-charge voltage v gs 12 v continuous drain current@v gs =4.5v; t a =25 c (b)(d) @v gs =4.5v; t a =70 c (b)(d) @v gs =2.5v; t a =25 c (a)(d) i d 2.72 2.18 2.00 a a a pulsed drain current (c) i dm t.b.a a source current (body diode) @t a =25 c (b)(d) i s 2.7 a pulsed source current (body diode)(c) i sm t.b.a a storage temperature range t stg -55 to +150 c junction temperature t j 150 c schottky diode continuous reverse voltage v r 40 v forward current i f 1a non repetitive forward current t 100 s t 10ms i fsm 12 5.2 a a forward voltage @ 1a v f 500 mv storage temperature range t stg -55 to +150 c junction temperature t j 125 c absolute maximum ratings. notes (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditio ns with all exposed pads attached. the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only. (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz we ight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 500mw.
ZXMNS3BM832 draft issue b - june 2002 3 parameter symbol value unit junction to ambient (a)(f) r ja 83.3 c/w junction to ambient (b)(f) r ja 43 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w thermal resistance notes (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditio ns with all exposed pads attached. the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only. (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz we ight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 500mw. parameter symbol value unit schottky power dissipation at ta=25c (a)(d) linear derating factor p d 1.2 12 w mw/c transistor power dissipation at ta=25c (a)(f) linear derating factor p d 1.5 12 w mw/c power dissipation at ta=25c (b)(f) linear derating factor p d 2.9 23.2 w mw/c power dissipation at ta=25c (c)(f) linear derating factor p d 1 8 w mw/c power dissipation at ta=25c (d)(f) linear derating factor p d 1.13 8 w mw/c power dissipation at ta=25c (d)(g) linear derating factor p d 1.7 13.6 w mw/c power dissipation at ta=25c (e)(g) linear derating factor p d 3 24 w mw/c thermal parameters
ZXMNS3BM832 draft issue b - june 2002 4 parameter symbol min. typ. max. unit conditions. mosfet static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 0.7 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.13 0.17 0.18 0.25 ? ? v gs =4.5v, i d =1.5a v gs =2.5v, i d =1.3a forward transconductance (1)(3) g fs t.b.a s v ds =15v,i d =1.5a dynamic (3) input capacitance c iss 314 pf v ds =15v,v gs =0v, f=1mhz output capacitance c oss 40 pf reverse transfer capacitance c rss 23 pf switching (2) (3) turn-on delay time t d(on) 1.1 ns v dd =15v, i d =1a r g =6.0 ? ,v gs =4.5v rise time t r 1.5 ns turn-off delay time t d(off) 5.1 ns fall time t f 2.1 ns total gate charge q g 2.9 nc v ds =15v,v gs =4.5v, i d =1.5a gate-source charge q gs 0.6 nc gate-drain charge q gd 0.8 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =1.7a, v gs =0v reverse recovery time (3) t rr 17.7 ns t j =25c, i f =2.7a, di/dt= 100a/ s reverse recovery charge (3) q rr 13.0 nc schottky diode electrical characteristics reverse breakdown voltage v (br)r 40 60 v i r =300 a forward voltage v f 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 ? mv mv mv mv mv mv mv mv i f =50ma* i f =100ma* i f =250ma* i f =500ma* i f =750ma* i f =1000ma* i f =1500ma* i f =1000ma,t a =100c reverse current i r 50 100 av r =30v diode capacitance c d 25 pf f=1mhz,v r =25v reverse recovery time t rr 12 ns switched from i f =500ma to i r =500ma measured at i r =50ma electrical characteristics (at t amb = 25c unless otherwise stated). notes: (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4422 fax: (44) 161 622 4420 zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 zetex inc 700 veterans memorial hwy hauppauge, ny11788 usa telephone: (631) 360 2222 fax: (631) 360 8222 zetex (asia) ltd 3701-04 metroplaza, tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2002 ZXMNS3BM832 draft issue b - june 2002 5 controlling dimensions in millimetres approx. converted dimensions in inches mlp832 package outline (3mm x 2mm micro leaded package) dim millimetres inches dim millimetres inches min. max. min. max. min. max. min. max. a 0.80 1.00 0.031 0.039 e 0.65 ref 0.0256 bsc a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 bsc a2 0.65 0.75 0.0255 0.0295 e2 0.43 0.63 0.017 0.0249 a3 0.15 0.25 0.006 0.0098 e4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 l 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 l2 0.125 0.00 0.005 d 3.00 bsc 0.118 bsc r 0.075 bsc 0.0029 bsc d2 0.82 1.02 0.032 0.040 0 12 0 12 d3 1.01 1.21 0.0397 0.0476 mlp832 package dimensions
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